Integratedcircuits Electronics ADG918BRMZ Wideband 4 GHz 43 dB
ADG918BRMZ Wideband 4 GHz, 43 dB Isolation at 1 GHz, CMOS 1.65 V to 2.75 V,
FUNCTIONAL BLOCK DIAGRAMS
Wideband switch: −3 dB @ 4 GHz
High off isolation (43 dB @ 1 GHz)
Low insertion loss (0.8 dB @1 GHz)
Single 1.65 V to 2.75 V power supply
CMOS/LVTTL control logic
8-lead MSOP and tiny 3 mm × 3 mm LFCSP packages
Low power consumption (<1 μA)
General-purpose RF switching
High speed filter selection
Digital transceiver front end switch
Antenna diversity switching
The ADG918/ADG919 are wideband switches using a CMOS process to
provide high isolation and low insertion loss to 1 GHz. The ADG918
is an absorptive (matched) switch having 50 Ω terminated shunt
legs, whereas the ADG919 is a reflective switch. These devices are
designed such that the isolation is high over the dc to 1 GHz
frequency range. They have on-board CMOS control logic, thus
eliminating the need for external controlling circuitry. The
control inputs are both CMOS and LVTTL compatible. The low power
consumption of these CMOS devices makes them ideally suited to
wireless and general-purpose high frequency switching
1. –43 dB off isolation @ 1 GHz.
2. 0.8 dB insertion loss @ 1 GHz.
3. Tiny 8-lead MSOP/LFCSP packages.
VDD = 1.65 V to 2.75 V, GND = 0 V, input power = 0 dBm, all
specifications TMIN to TMAX, unless otherwise noted. Temperature
range for B Version: −40°C to +85°C.
CTRL Input Capacitance
f = 1 MHz
f = 1 MHz
Quiescent Power Supply Current
|IDD||Digital inputs = 0 V or VDD||1.65|
1 Typical values are at VDD = 2.5 V and 25°C, unless otherwise
2 Point at which insertion loss degrades by 1 dB.
3 Guaranteed by design, not subject to production test.
4 The dc transience at the output of any port of the switch when
the control voltage is switched from high to low or low to high in
a 50 Ω test setup, measured with 1 ns rise time pulses and 500 MHz