Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

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Brand Name :Anterwell
Model Number :SGP02N120
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8300pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Collector-emitter voltage :1200 V
DC collector current :6.2 A
Pulsed collector current :9.6 A
Gate-emitter voltage :±20 V
Power dissipation :62 W
Operating junction and storage temperature :-55...+150°C
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SGP02N120, SGB02N120, SGD02N120

Fast S-IGBT in NPT-technology

• 40% lower Eoff compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

Maximum Ratings

Parameter Symbol Value Unit
Collector-emitter voltage VCE 1200 V

DC collector current

TC = 25°C

TC = 100°C

IC

6.2

2.8

A
Pulsed collector current, tp limited by Tjmax ICpuls 9.6 A
Turn off safe operating area VCE ≤ 1200V, Tj ≤ 150°C 9.6 A
Gate-emitter voltage VGE ±20 V
Avalanche energy, single pulse IC = 2A, VCC = 50V, RGE = 25Ω, start at Tj = 25°C EAS 10 mJ
Short circuit withstand time1) VGE = 15V, 100V ≤ VCC ≤ 1200V, Tj ≤ 150°C tSC 10 µs
Power dissipation TC = 25°C Ptot 62 W
Operating junction and storage temperature Tj , Tstg -55...+150 °C
Soldering temperature, 1.6mm (0.063 in.) from case for 10s 260 °C

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China SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology for sale

SGP02N120 Power Mosfet Transistor Fast S-IGBT in NPT-technology

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