Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

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Brand Name :Anterwell
Model Number :FDS6975
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Drain-Source Voltage :-30 V
Gate-Source Voltage :±20 V
Drain Current - Continuous :-6 A
Power Dissipation for Dual Operation :2 W
Operating and Storage Temperature :-55 to 150 °C
Thermal Resistance, Junction-to-Ambient :78 °C/W
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FDS6975 Dual P-Channel, Logic Level, PowerTrenchTM MOSFET

General Description

These P-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

Features

• -6 A, -30 V. RDS(ON) = 0.032 W @ VGS = -10 V,

RDS(ON) = 0.045 W @ VGS = -4.5 V.

• Low gate charge (14.5nC typical).

• High performance trench technology for extremely low RDS(ON).

• High power and current handling capability.

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

Absolute Maximum Ratings TA = 25℃ unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain-Source Voltage -30 V
VGSS Gate-Source Voltage ±20 V
ID

Drain Current - Continuous (Note 1a)

- Pulsed

-6 A
-20
PD Power Dissipation for Dual Operation 2 W

Power Dissipation for Single Operation (Note 1a)

(Note 1b)

(Note 1c)

1.6
1
0.9
TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C

THERMAL CHARACTERISTICS

RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

Notes:

1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

2. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0%.

Stock Offer (Hot Sell)

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China FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET for sale

FDS6975 Power Mosfet Module Dual P - Channel , PowerTrenchTM MOSFET

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