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ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET

ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET

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Brand Name :Anterwell
Model Number :ATF26884
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Drain-Source Voltage :+7 V
Gate-Source Voltage :-4 V
Gate-Drain Voltage :-8 V
Power Dissipation :275 mW
Channel Temperature :175 °C
Storage Temperature :-65 to +150 °C
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View Product Description

2–16 GHz General Purpose Gallium Arsenide FET

ATF-26884

Features

• High Output Power: 18.0 dBm Typical P 1 dB at 12 GHz

• High Gain: 9.0 dB Typical GSS at 12 GHz

• Low Cost Plastic Package

• Tape-and-Reel Packaging Option Available[1]

Description

The ATF-26884 is a high performance gallium arsenide Schottkybarrier-gate field effect transistor housed in a cost effective microstrip package. This device is designed for use in oscillator applications and general purpose amplifier applications in the 2-16␣ GHz frequency range.

This GaAs FET device has a nominal 0.3 micron gate length with a total gate periphery of 250␣ microns. Proven gold based metallization systems and nitride passivation assure a rugged, reliable device.

84 Plastic Package

ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET

ATF-26884 Absolute Maximum Ratings

Symbol Parameter Units Absolute Maximum[1]
VDS Drain-Source Voltage V +7
VGS Gate-Source Voltage V -4
VGD Gate-Drain Voltage V -8
IDS Drain Current mA IDSS
PT Power Dissipation[2,3] mW 275
TCH Channel Temperature °C 175
TSTG Storage Temperature °C -65 to +150

Thermal Resistance: θjc = 300°C/W; TCH = 150°C

Liquid Crystal Measurement: 1 µm Spot Size[4]

Notes:

1. Permanent damage may occur if any of these limits are exceeded.

2. TCASE TEMPERATURE = 25°C.

3. Derate at 3.3 mW/°C for TCASE > 92.5°C.

4. The small spot size of this technique results in a higher, though more accurate determination of θjc than do alternate methods. See MEASUREMENTS section for more information.

Stock Offer (Hot Sell)

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STF11NM60N 2000 ST 16+ TO-220F
SY100EP11UKG 2000 MICREL 13+ MSOP-8
TAS5342ADDVR 2000 TI 15+ HTSSOP-44
TDA7050T 2000 NXP 16+ SOP8
TJA1040T 2000 NXP 16+ SOP-8
TPS54332DDAR 2000 TI 14+ SOP8
HEF4051 2005 NXP 14+ SOP-16
ZTX951 2005 ZETEX 14+ TO-92
UC3879N 2008 TI 16+ DIP
LM2576HVT-ADJ 2010 NS 16+ TO220
SN74HC02N 2010 TI 13+ DIP
AT93C46DN-SH-T 2027 ATMEL 15+ SOP8
40CPQ100PBF 2055 VISHAY 16+ TO-247
LPC1752FBD80 2080 NXP 16+ LQFP80
PIC16F1934-I/PT 2080 MICROCHIP 14+ QFP
1N5362B 2100 ON 14+ DIP
6N137SD 2100 FSC 14+ SOP8
CD4047BM96 2100 TI 16+ SOP
FSDL0165RN 2100 FSC 16+ DIP-8
ISD17240PY 2100 ISD 13+ DIP28
MC34063 2100 ON 15+ SOP8
MDP13N50TH 2100 MAGNACHIP 16+ TO-220
PIC16F72-I/SP 2100 MICROCHIP 16+ DIP-28

China ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET for sale

ATF26884 Power Mosfet Transistor General Purpose Gallium Arsenide FET

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