Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

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Brand Name :Anterwell
Model Number :FDN337N
Certification :new & original
Place of Origin :original factory
MOQ :10PCS
Price :Negotiate
Payment Terms :T/T, Western Union, MoneyGram Paypal
Supply Ability :3000pcs/week
Packaging Details :Please contact me for details
Drain-Source Voltage :30V
Gate-Source Voltage - Continuous :±8V
Operating and Storage Temperature Range :-55 to 150 °C
Packaging :SOT-23
Weight :30 mg
Factory packing quantity :3000
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View Product Description
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
SuperSOTTM-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
Features
2.2 A, 30 V, RDS(ON) = 0.065 W @ VGS = 4.5 V RDS(ON) = 0.082 W @ VGS = 2.5 V.
Industry standard outline SOT-23 surface mount package using proprietary
SuperSOTTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON).
Exceptional on-resistance and maximum DC current capability.
FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

Symbol Parameter FDN337N Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage - Continuous ±8 V
ID

Drain/Output Current - Continuous

- Pulsed

2.2

10

A
PD

Maximum Power Dissipation (Note 1a)

(Note 1b)

0.5

0.46

TJ ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RqJA Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
RqJC Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W

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China FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor for sale

FDN337N N-Channel Logic Level Enhancement Mode Field Effect Transistor

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