Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

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Brand Name :Anterwell
Model Number :IRF1010EPBF
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :9000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Pulsed Drain Current :330 A
Power Dissipation :200 W
Linear Derating Factor :1.4 W/°C
Gate-to-Source Voltage :± 20 V
Avalanche Current :50 A
Repetitive Avalanche Energy :17 mJ
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View Product Description

IRF1010EPbF

HEXFET® Power MOSFET

• Advanced Process Technology 

• Ultra Low On-Resistance 

• Dynamic dv/dt Rating 

• 175°C Operating Temperature 

• Fast Switching 

• Fully Avalanche Rated 

• Lead-Free

Description

Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

Absolute Maximum Ratings

Parameter Max. Unit
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 84 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 59 A
IDM Pulsed Drain Current 330 A
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.4 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 50 A
EAR Repetitive Avalanche Energy 17 mJ
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
TJ TSTG Operating Junction and Storage Temperature Range -55 to + 175 °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Stock Offer (Hot Sell)

Part no. Quantity Brand D/C Package
CS4344-CZZR 3800 CIRRUS 16+ MSOP
LTC1844ES5-3.3 3800 LINEAR 16+ SOT23-5
MC33039P 3800 ON 13+ DIP-8
MMA7660FCR1 3800 FREESCALE 15+ DFN-10
NLV32T-100J-PF 3800 TDK 16+ SMD
PC401 3800 SHARP 16+ SOP-5
SN75179BP 3800 TI 14+ DIP8
STP10NK70ZFP 3800 ST 14+ TO-220
UC3842BD1R2G 3800 ON 14+ SOP-8
LM393DR 3810 TI 16+ SOP8
BZX84-C18 3820 NXP 16+ SOT-23
LPC2136FBD64 3820 NXP 13+ TQFP-64
LP3982IMMX-2.5 3821 NS 15+ MSOP8
TOP224PN 3821 POWER 16+ DIP-8
TLP121 3822 TOSHIBA 16+ SOP-4
IRF4905 3870 IR 14+ TO-220
MC3403 3870 ON 14+ SOP-14
P2504EDG 3870 INKO 14+ TO-252
STB16NS25 3870 ST 16+ TO-263
SSM3K7002FU 3871 TOSHIBA 16+ SOT323
3122V 3880 SANYO 13+ TO-3P
CD4017BCN 3880 NSC 15+ DIP
MIC842LYC5 3880 MICREL 16+ SC70-5
IMZ2A 3887 ROHM 16+ SOT-163
EPCS4SI8N 3888 ALTERA 14+ SOP-8
SN74LVC1T45DCK 3888 TI 14+ SC-70-6
UCC2813D-2 3888 TI 14+ SOP8
2SC4552 3900 NEC 16+ TO-220
MC14551BDR2G 3900 ON 16+ SOP16
MX29LV040CQC-70G 3900 MXIC 13+ PLCC

China IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET for sale

IRF1010EPBF Power Mosfet Transistor Fast Switching HEXFET Power MOSFET

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