Add to Cart
AO4408 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408 and AO4408L are electrically identical. -RoHS Compliant -AO4408L is Halogen Free
Features
VDS (V) = 30V
ID = 12A (VGS = 10V)
RDS(ON) < 13mΩ (VGS = 10V)
RDS(ON) < 16mΩ (VGS = 4.5V)

Thermal Characteristics
| Parameter | Symbol | Typ | Max | Units | |
| Maximum Junction-to-Ambient A | t ≤ 10s | Roja | 23 | 40 | °C/W |
| Maximum Junction-to-Ambient A | Steady-State | 48 | 65 | °C/W | |
| Maximum Junction-to-Lead C | Steady-State | Rojl | 12 | 16 | °C/W |
