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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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Brand Name :ISC
Model Number :BT136-600E
Certification :Original Factory Pack
Place of Origin :China
MOQ :4000pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal,
Supply Ability :240000PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Description :Glass passivated, sensitive gate triacs
Repetitive peak off-state voltage :600 V
Average on-state current :4 A
Non-repetitive peak on-state current :25 A
Storage temperature :-45~150 ℃
Package :TO-220AB
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Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

‹ Features

·With TO-220AB package

·Glass passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.

‹

QUICK REFERENCE DATA

SYMBOL PARAMETER VALUE UNIT
VDRM Repetitive peak off-state voltage 600 V
VRRM Repetitive peak off-state voltage 600 V
IT(AV) Average on-state current 4 A
ITSM Non-repetitive peak on-state current 25 A
Tstg Storage temperature -45~150

PIN CONFIGURATION SYMBOL

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

Triacs BT136 series E sensitive gate

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

MECHANICAL DATA

Complementary Power Mosfet Transistor BT136-600E Thyristor Triacs Sensitive Gate

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