Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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Signal Power Mosfet Transistor P Channel Enhancement Mode BSP315 SIPMOS
• P channel
• Enhancement mode 
• Logic Level
• VGS(th) = -0.8...-2.0 V
Drain-source breakdown voltage V(BR)DSS = ƒ(Tj )
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
Maximum Ratings
| Parameter | Symbol | Values | Unit |
| Drain source voltage | VDS | -50 | V |
| Drain-gate voltage RGS = 20 kΩ | VDGR | -50 | |
| Gate source voltage | VGS | ± 20 | |
| Continuous drain current TA = 39 °C | ID | -1.1 | A |
| DC drain current, pulsed TA = 25 °C | IDpuls | -4.4 | |
| Power dissipation TA = 25 °C | Ptot | 1.8 | W |