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IC 3 Pin Transistor 2SK3797 MOS Field Effect Transistor Stock Offer
2SK3797 Field Effect Transistor Silicon N-Channel MOS Type 
Switching Regulator Applications
• Low drain-source ON resistance: RDS (ON) = 0.32Ω (typ.)
• High forward transfer admittance: |Yfs| = 7.5 S (typ.)
• Low leakage current: IDSS = 100 μA (VDS = 600 V)
• Enhancement model: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
| Characteristic | Symbol | Rating | Unit |
| Drain-source voltage | VDSS | 600 | V |
| Drain-gate voltage (RGS = 20 kΩ) | VDGR | 600 | V |
| Gate-source voltage | VGSS | ±30 | V |
| Drain current DC Pulse (t = 1 ms) | ID | 13 | A |
| IDP | 52 | ||
| Drain power dissipation (Tc = 25°C) | PD | 50 | W |
| Single pulse avalanche energy | EAS | 1033 | mJ |
| Avalanche current | AR | 13 | A |
| Repetitive avalanche energy | EAR | 5.0 | mJ |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | -50-150 | °C |
Thermal Characteristics
| Characteristic | Symbol | Max | Unit |
| Thermal resistance, channel to case | Rth (ch-c) | 2.5 | w/ °C |
| Thermal resistance, channel to abinent | Rth (ch-a) | 62.5 | w/ °C |
Note 1: Ensure that the channel temperature does not exceed 150°C during use of the device.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 10.7 mH, IAR = 13 A, RG = 25 Ω
Note 3: Repetitive rating: pulse width limited by maximum channel temperature This transistor is an electrostatic-sensitive device. Handle with care.