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FGA25N120ANTD/FGA25N120ANTD_F109
1200V NPT Trench IGBT
Features
• NPT Trench Technology, Positive temperature coefficient
• Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25°C
• Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25°C
• Extremely enhanced avalanche capability
Description
Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation.
This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc.
| Symbol | Parameter | Typ. | Max. | Units |
| RθJC | Thermal Resistance, Junction-to-Case for IGBT | -- | 0.4 | °C/W |
| RθJC | Thermal Resistance, Junction-to-Case for Diode | -- | 2.0 | °C/W |
| RθJA | RθJA Thermal Resistance, Junction-to-Ambient | -- | 40 | °C/W |
Typical Performance Characteristics