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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

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Brand Name :IRF
Model Number :IRLML6402TRPBF
Certification :Original Factory Pack
Place of Origin :Japan
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Drain- Source Voltage :-20 V
Continuous Drain Current, VGS @ -4.5V :-2.2 A
Pulsed Drain Current  :-22 A
Power Dissipation :1.3 W
Linear Derating Factor :0.01 W/°C
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Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF


♦Ultra Low On-Resistance

♦P-Channel MOSFET

♦SOT-23 Footprint

♦Low Profile (<1.1mm)

♦Available in Tape and Reel

♦Fast Switching 

Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBFThese P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.

A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3™, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available.

Ultra Low On Resistance HEXFET power mosfet ic IRLML6402TRPBF

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