Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

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Brand Name :Anterwell
Model Number :2SC1972
Certification :new & original
Place of Origin :original factory
MOQ :20
Price :Negotiation
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8000
Delivery Time :1 day
Packaging Details :Please contact me for details
High Power Gain :Gpe>=7.5dB @Vcc=13.5V, Po=14W, f=175MHz
Package :TO-220
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

DESCRIPTION:

The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications.

FEATURES INCLUDE:

• Replaces Original 2SC1972 in Most Applications

• High Gain Reduces Drive Requirements

• Economical TO-220 Package

MAXIMUM RATINGS

IC 3.5 A
VCBO 35 V
PDISS 25 W @ TC = 25 °C
TSTG -55 °C to +175 °C
θJC 6.0 °C/W

NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972

CHARACTERISTICS TC = 25 °C

SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
BVCEO IC = 50 mA 17 V
BVCBO IC = 10 mA 35 V
BVEBO IC = 10 mA 4.0 V
ICBO VCES = 25 V 100 µA
IEBO VEB = 3.0 V 500 µA
hFE VCE = 10 V IC = 100 mA 10 50 180 ---

ηC

POUT

VCC = 13.5 V PIN = 2.5 W f =175 MHz

60

14

70

15

%

W

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