Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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NPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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NPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

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Brand Name :Anterwell
Model Number :2SC2274
Certification :new & original
Place of Origin :original factory
MOQ :20
Price :Negotiation
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10000
Delivery Time :1 day
Packaging Details :Please contact me for details
High Breakdown Voltage :Vceo>=50/80V
High Current :Ic=500mA
Collector to Base Voltage :60V
Collector Power Dissipation :600mW
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NPN Plastic Encapsulated TransistorNPN Plastic Encapsulated Transistor 2SC2274 Low Frequency Power Amp Applications

2SC2274

FEATURES

* High Breakdown Voltage

* High Current

* Low Saturation Voltage

CLASSIFICATION OF hFE(1)

Product-Rank 2SC2274-D 2SC2274-E 2SC2274-F
Range 60~120 100~200 160~320

ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO 60 V
Collector to Emitter Voltage VCEO 50 V
Emitter to Base Voltage VEBO 5 V
Collector Current - Continuous IC 0.5 A
Collector Power Dissipation PC 600 mW
Thermal Resistance From Junction To Ambient RθJA 208 °C / W
Junction, Storage Temperature TJ, TSTG 150, -55~150 °C

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter Symbol Min. Typ. Max. Unit Test Conditions
Collector to Base Breakdown Voltage V(BR)CBO 60

--

-- V IC=0.01mA, IE=0
Collector to Emitter Breakdown Voltage V(BR)CEO 50 -- -- V IC=1mA, IB=0
Emitter to Base Breakdown Voltage V(BR)EBO 5 -- -- V IE=0.01mA, IC=0
Collector Cut – Off Current ICBO -- -- 1 μA VCB=40V, IE=0
Emitter Cut – Off Current IEBO -- -- 1 μA VEB=4V, IC=0
DC Current Gain

hFE(1)

hFE(2)

60

35

--

--

320

--

VCE=5V, IC=50mA

VCE=5V, IC=400mA

Collector to Emitter Saturation Voltage VCE(sat) -- -- 0.6 V IC=400mA, IB=40mA
Base to Emitter voltage VBE(sat) -- -- 1.2 V IC=400mA, IB=40mA
Transition Frequency fT -- 120 -- MHz VCE=10V, IC=10mA
Collector Output Capacitance Cob -- 5 -- pF VCB=10V, f=1MHz

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