Anterwell Technology Ltd.

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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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Brand Name :Anterwell
Model Number :2SC5707
Certification :new & original
Place of Origin :original factory
MOQ :20
Price :Negotiate
Payment Terms :T/T, Western Union,Paypal
Supply Ability :9500
Delivery Time :1 day
Packaging Details :Please contact me for details
Collector Cutoff Current :<= (--)0.1 µA
Emitter Cutoff Current :<= (--)0.1 µA
DC Current Gain :200-560
Gain-Bandwidth Product :(290)330 MHz
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PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Applications

• DC / DC converter, relay drivers, lamp drivers, motor drivers, flash

Features

• Adoption of FBET and MBIT processes.

• Large current capacitance.

• Low collector-to-emitter saturation voltage.

• High-speed switching.

• High allowable power dissipation.

Specifications ( ) : 2SA2040

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO -- (--50)100 V
Collector-to-Emitter Voltage VCES -- (--50)100 V
Collector-to-Emitter Voltage VCEO -- (--)50 V
Emitter-to-Base Voltage VEBO -- (--)6 V
Collector Current IC -- (--)8 A
Collector Current (Pulse) ICP -- (--)11 A
Base Current IB -- (--)2 A
Collector Dissipation PC

--

Tc=25°C

1.0

15

W

W

Junction Temperature Tj -- 150 °C
Storage Temperature Tstg -- --55 to +150 °C

Electrical Characteristics at Ta=25°C

Parameter Symbol Conditions min. Typ. max. unit
Collector Cutoff Current ICBO VCB=(--)40V, IE=0A -- -- (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A -- -- (--)0.1 µA
DC Current Gain hFE VCE=(--)2V, IC=(--)500mA 200 -- 560 --
Gain-Bandwidth Product fT VCE=(--)10V, IC=(--)500mA -- (290)330 -- MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz -- (50)28 -- pF
Collector-to-Emitter Saturation Voltage

VCE(sat)1

VCE(sat)2

IC=(--)3.5A, IB=(--)175mA

IC=(--)2A, IB=(--)40mA

--

--

(--230)160

(--240)110

(--390)240

(--400)170

mV

mV

Base-to-Emitterr Saturation Voltage VBE(sat) IC=(--)2A, IB=(--)40mA -- (--)0.83 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10µA, IE=0A (--50)100 -- -- V
Collector-to-Emitter Breakdown Voltage V(BR)CES IC=(--)100µA, RBE=0Ω (--50)100 -- -- V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 -- -- V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10µA, IC=0A (--)6 -- -- V
Turn-On Time ton See specified Test Circuit. -- (40)30 -- ns
Storage Time tstg See specified Test Circuit. -- (225)420 -- ns
Fall Time tf See specified Test Circuit. -- 25 -- ns

Package Dimensions Package Dimensions

unit : mm unit : mm

7518-003 7003-003

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

Switching Time Test Circuit

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

PNP / NPN Epitaxial Planar silicon power transistors 2SC5707 for High Current Switching

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