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GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
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GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

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Brand Name :Anterwell
Model Number :SW-289
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :3100pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Very Low Power Consumption :100 µW
Low Insertion Loss :0.5 dB
High Isolation :25 dB up to 2 GHz
Temperature Range :-40˚C to +85˚C
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GaAs DPDT Switch DC - 2 GHz SW-289

Features

  • Very Low Power Consumption: 100 µW
  • Low Insertion Loss: 0.5 dB
  • High Isolation: 25 dB up to 2 GHz
  • Very High Intercept Point: 48 dBm IP3
  • Nanosecond Switching Speed
  • Temperature Range: -40˚C to +85˚C
  • Low Cost SOIC14 Plastic Package
  • Tape and Reel Packaging Available1

Description

M/A-COM’s SW-289 is a GaAs MMIC DPDT switch in a low cost SOIC 14-lead surface mount plastic package. The SW-289 is ideally suited for use where very low power consumption is re q u i re d . Typical applications include transmit/receive switching, switch matrices, digital step attenuators, and filter banks in systems such as: radio and cellular equipment, PCM, GPS, fiber optic modules, and other battery powered radio equipment.

The SW-289 is fabricated with a monolithic GaAs MMIC using a mature 1-micron process. The process features full chip passivation for increased performance and reliability.

Electrical Specifications, TA = +25°C

Parameter Test Conditions2 Unit Min. Typ. Max.
Insertion Loss

DC – 0.1 GHz

DC – 0.5 GHz

DC – 1.0 GHz

DC – 2.0 GHz

dB

dB

dB

dB

0.35

0.35

0.4

0.6

0.5

0.5

0.6

0.8

Isolation

DC – 0.1 GHz

DC – 0.1 GHz

DC – 1.0 GHz

DC – 2.0 GHz

dB

dB

dB

dB

50

40

32

20

56

43

35

23

VSWR DC – 2.0 GHz 1.3:1

Trise, Tfall

Ton, Toff

Transients

10% to 90% RF, 90% to 10% RF

50% Control to 90% RF, 50% Control to 10% RF

In Band

nS

nS

mV

3

6

15

One dB

Compression

Input Power 0.05 GHz

Input Power 0.5 – 2.0 GHz

dBm

dBm

22

27

IP2

Measured Relative 0.05 GHz

to Input Power 0.5 – 2.0 GHz

(for two-tone input power up to +5 dBm)

dBm

dBm

54

66

IP3

Measured Relative 0.05 GHz

to Input Power 0.5 – 2.0 GHz

(for two-tone input power up to +5 dBm)

dBm

dBm

45

48

1. Refer to “Tape and Reel Packaging” section, or contact factory.

2. All measurements with 0, -5 V control voltages at 1 GHz in a 50W system, unless otherwise specified.

Absolute Maximum Ratings1

Parameter Absolute Maximum

Max. Input Power

0.05 GHz

0.5 – 2.0 GHz

Control Voltage

Operating Temperature

Storage Temperature

+27 dBm

+34 dBm

+5 V, -8.5 V

-40°C to +85°C

-65°C to +150°C

1.Operation of this device above any one of these

parameters may cause permanent damage.

Functional Schematic

GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

Typical Performance

GaAs DPDT Switch Integrated Circuit Components IC Chip DC - 2 GHz SW-289

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