Anterwell Technology Ltd.

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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

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Brand Name :TI
Model Number :CSD19533Q5A
Certification :Original Factory Pack
Place of Origin :Original
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Drain-to-Source Voltage :100 V
Gate Charge Total (10 V) :27 nC
Gate Charge Gate to Drain :4.9 nC
Drain-to-Source On Resistance :8.7 mΩ
Threshold Voltage :2.8 V
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FEATURES Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

• Ultra-Low Qg and Qgd

• Low Thermal Resistance

• Avalanche Rated

• Pb-Free Terminal Plating

• RoHS Compliant

• Halogen Free

• SON 5-mm × 6-mm Plastic Package

APPLICATIONS

• Primary Side Telecom

• Secondary Side Synchronous Rectifier

• Motor Control

DESCRIPTION

This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™

power MOSFET is designed to minimize losses in

power conversion applications.

Q5A Tape and Reel Information

Low Thermal Resistance 100 V N-Channel NexFET Power MOSFETs CSD19533Q5A

Notes:

1. 10-sprocket hole-pitch cumulative tolerance ±0.2

2. Camber not to exceed 1 mm in 100 mm, noncumulative over 250 mm

3. Material: black static-dissipative polystyrene

4. All dimensions are in mm (unless otherwise specified)

5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket

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