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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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100V 80A, 9mз Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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Brand Name :FAIRCHILD
Model Number :FDB3632
Certification :Original Factory Pack
Place of Origin :Thailand
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
Drain to Source Voltage :100 V
Gate to Source Voltage :±20 V
Continuous (T 80 A C < 111oC, VGS = 10V) :80 A
Continuous (Tamb = 25oC, VGS = 10V, RθJA = 43oC/W) :12 A
Single Pulse Avalanche Energy (Note 1) :393 mJ
Power dissipation :310 W
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View Product Description

FDB3632 / FDP3632 / FDI3632

N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ

Features

• rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A

• Qg(tot) = 84nC (Typ.), VGS = 10V 100V 80A, 9mз  Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

• Low Miller Charge

• Low QRR Body Diode

• UIS Capability (Single Pulse and Repetitive Pulse)

• Qualified to AEC Q101 Formerly developmental type 82784

Applications

• DC/DC converters and Off-Line UPS

• Distributed Power Architectures and VRMs

• Primary Switch for 24V and 48V Systems

• High Voltage Synchronous Rectifier

• Direct Injection / Diesel Injection Systems

• 42V Automotive Load Control

• Electronic Valve Train Systems

100V 80A, 9mз  Power Mosfet Transistor Qualified to AEC Q101 UIS Capability FDB3632

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