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NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor 2SC5200

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Brand Name :FAIRCHILD
Model Number :2SC5200
Certification :Original Factory Pack
Place of Origin :Original
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
High Current Capability :IC = 15A.
High Power Dissipation :150watts.
High Frequency :30MHz
High Voltage :VCEO=230V
Collector-Base Voltage :230 V
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2SC5200/FJL4315

NPN Epitaxial Silicon Transistor

Applications NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor   2SC5200

• High-Fidelity Audio Output Amplifier

• General Purpose Power Amplifier

Features

• High Current Capability: IC = 15A.

• High Power Dissipation : 150watts.

• High Frequency : 30MHz.

• High Voltage : VCEO=230V

• Wide S.O.A for reliable operation.

• Excellent Gain Linearity for low THD.

• Complement to 2SA1943/FJL4215.

• Thermal and electrical Spice models are available.

• Same transistor is also available in:

-- TO3P package, 2SC5242/FJA4313 : 130 watts

-- TO220 package, FJP5200 : 80 watts

-- TO220F package, FJPF5200 : 50 watts

Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Symbol Parameter Ratings Units
BVCBO 230 V BVCBO Collector-Base Voltage 230 V
BVCEO Collector-Emitter Voltage 230 V
BVEBO BVEBO Emitter-Base Voltage 5 V 5 V
IC Collector Current(DC) 15 A
IB Base Current 1.5 A
PD

Total Device Dissipation(TC=25°C)

Derate above 25°C

150

1.04

W

W/°C

TJ, TSTG Junction and Storage Temperature - 50 ~ +150 °C

Typical Characteristics

NPN Epitaxial Silicon Transistor POWER AMPLIFIER APPLICATIONS isc Silicon NPN Power Transistor   2SC5200

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