Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT30J121
High Power Switching Applications
Fast Switching Applications
• The 4th generation
• Enhancement-mode
• Fast switching (FS):
Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
• Low saturation voltage: VCE (sat) = 2.0 V (typ.)
Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Collector-emitter voltage | VCES | 600 | V |
| Gate-emitter voltage | VGES | ±20 | V |
| Collector power dissipation (Tc = 25°C) | PC | 170 | W |
| Junction temperature | Tj | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 | °C |
Switching time measurement circuit and input/output waveforms