Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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N-CHANNEL SILICON POWER MOSFET
Features Outline Drawings
High speed switching 
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Equivalent circuit schematic
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
| Item | Symbol | Ratings | Unit | |
| Drain-source voltage | VDS | 500 | V | |
| VDSX *5 | 500 | V | ||
| Continuous drain current | ID | ±21 | A | |
| Pulsed drain current | ID(puls] | ±84 | A | |
| Gate-source voltage | VGS | ±30 | V | |
| Repetitive or non-repetitive | IAR *2 | 21 | A | |
| Maximum Avalanche Energy | EAS *1 | 400 | mJ | |
| Maximum Drain-Source dV/dt | dVDS/dt *4 | 20 | kV/µs | |
| Peak Diode Recovery dV/dt | dV/dt *3 | 5 | kV/µs | |
| Max. power dissipation | PD | Ta=25°C | 2.5 | W |
| Tc=25°C | 220 | W | ||
| Operating and storage temperature range | Tch | +150 | °C | |
| Tstg | -55 to +150 | °C | ||
*1 L=1.67mH, Vcc=50V
*2 Tch 150°C < = <
*3 IF -I <= D, -di/dt=50A/µs, Vcc BV <= DSS, Tch 150°C
*4 VDS 500V
*5 V <= GS=-30V
Characteristics