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Fuji Power MOSFET SuperFAP-G series Target Specification
2SK3683-01MR (500V/0.38Ω/19A)
1) Package TO-220F15R
2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)
| Characteristics | Symbol | Rating | Unit | |
| Drain−source voltage | VDS | 500 | V | |
| Continuous Drain Current | ID | ±19 | A | |
| Pulsed Drain Current | ID(pulse) | ±76 | A | |
| Gate-Source Voltage | VGS | ±30 | V | |
| Repetitive and Non-Repetitive Maximum Avalanche Current | IAR | 19 | A | |
| Non-Repetitive Maximum Avalanche Energy | EAS | 245.3 | mJ *1 | |
| Maximum Drain-Source dV/dt | dVDS/dt | 20 | kV/us | |
| Peak Diode recovery dV/dt | dV/dt | 5 | kV/us *2 | |
| Maximum Power Dissipation | PD @Tc=25℃ | 95 | W | |
| PD @Ta=25℃ | 2.16 | W | ||
| Operating and Storage Temperature range | Tch | 150 | ℃ | |
| Tstg | -55 ~ +150 | ℃ | ||
Thermal Characteristics
| Items | Symbols | Test Conditions | min. | typ. | max. | Units |
| Channel to Case | Rth(ch-c) | 1.316 | ℃/W | |||
| Channel to Ambient | Rth(ch-a) | 58.0 | ℃/W |
*1 L=1.25mH,Vcc=50V
*2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C