Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

Manufacturer from China
Site Member
10 Years
Home / Products / 3 Pin Transistor /

New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

Contact Now
Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
Contact Now

New & Original Fuji Power MOSFET SuperFAP-G series Target Specification 2SK3683

Ask Latest Price
Video Channel
Brand Name :Anterwell
Model Number :2SK3683
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :10000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Drain-Source Voltage :500 V
Continuous Drain Current :±19 A
Pulsed Drain Current :±76 A
Gate-Source Voltage :±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current :19 A
Maximum Drain-Source dV/dt :20 kV/us
Operating Temperature :150℃
Storage ℃ Temperature range :-55 ~ +150℃
more
Contact Now

Add to Cart

Find Similar Videos
View Product Description

Fuji Power MOSFET SuperFAP-G series Target Specification

2SK3683-01MR (500V/0.38Ω/19A)

1) Package TO-220F15R

2) Absolute Maximum Ratings (Tc=25℃ unless otherwise specified)

Characteristics Symbol Rating Unit
Drain−source voltage VDS 500 V
Continuous Drain Current ID ±19 A
Pulsed Drain Current ID(pulse) ±76 A
Gate-Source Voltage VGS ±30 V
Repetitive and Non-Repetitive Maximum Avalanche Current IAR 19 A
Non-Repetitive Maximum Avalanche Energy EAS 245.3 mJ *1
Maximum Drain-Source dV/dt dVDS/dt 20 kV/us
Peak Diode recovery dV/dt dV/dt 5 kV/us *2
Maximum Power Dissipation PD @Tc=25℃ 95 W
PD @Ta=25℃ 2.16 W
Operating and Storage Temperature range Tch 150
Tstg -55 ~ +150

Thermal Characteristics

Items Symbols Test Conditions min. typ. max. Units
Channel to Case Rth(ch-c) 1.316 ℃/W
Channel to Ambient Rth(ch-a) 58.0 ℃/W

*1 L=1.25mH,Vcc=50V

*2 IF≤-ID,-di/dt=50A/µs,Vcc≤BVDSS,Tch≤150°C

Inquiry Cart 0