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TOSHIBA Photocoupler GaAs Ired&Photo−Transistor
TLP733, TLP734
Office Machine
Household Use Equipment
Solid State Relay
Switching Power Supply
The TOSHIBA TLP733 and TLP734 consist of a photo−transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP.
TLP734 is no−base internal connection for high−EMI environments.
(Note) When a VDE0884 approved type is needed, please designate the “Option (D4)”
7.62 mm pich 10.16 mm pich
standard type TLP×××F type
Creepage distance : 7.0 mm (min.) 8.0 mm (min.)
Clearance : 7.0 mm (min.) 8.0 mm (min.)
Internal creepage path : 4.0 mm (min.) 4.0 mm (min.)
Insulation thickness : 0.5 mm (min.) 0.5 mm (min.)
Maximum Ratings (Ta = 25°C)
Characteristic | Symbol | Rating | Unit | |
LED | Forward current | IF | 60 | mA |
Forward current derating (Ta ≥ 39°C) | ∆IF / °C | -0.7 | mA / °C | |
Peak forward current (100 µs pulse, 100 pps) | IFP | 1 | A | |
Reverse voltage | VR | 5 | V | |
Junction temperature | Tj | 125 | °C | |
Detector | Collectoremitter voltage | VCEO | 55 | V |
Collectorbase voltage (TLP733) | VCBO | 80 | V | |
Emittercollector voltage | VECO | 7 | V | |
Emitterbase voltage (TLP733) | VEBO | 7 | V | |
Collector current | IC | 50 | mA | |
Power dissipation | PC | 150 | mW | |
Power dissipation derating (Ta ≥ 25°C) | ∆PC / °C | -1.5 | mW / °C | |
Junction temperature | Tj | 125 | °C | |
Storage temperature range | Tstg | -55~125 | °C | |
Operating temperature range | Topr | -40~100 | °C | |
Lead soldering temperature (10 s) | Tsol | 260 | °C | |
Total package power dissipation | PT | 250 | mW | |
Total package power dissipation derating (Ta ≥ 25°C) | ∆PT / °C | -2.5 | mW / °C | |
Isolation voltage (AC, 1 min., R.H.≤ 60%) | BVS | 4000 | Vrms |
Weight: 0.42 g
Pin Configurations (top view)
TLP733
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Base
TLP734
1: Anode 2: Cathode 3: Nc 4: Emitter 5: Collector 6: Nc