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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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Brand Name :ONSEMI
Model Number :BSS138LT1G
Certification :Original Factory Pack
Place of Origin :Original
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
VDSS :50 Vdc
VGS :± 20 Vdc
I D :200 mA
PD :225 mW
TL :260 °C
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Power MOSFET 200 mA, 50 V N−Channel SOT−23

Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.

FeaturesBSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

• Pb−Free Packages are Available

• Low Threshold Voltage (VGS(th):

0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications

• Miniature SOT−23 Surface Mount Package Saves Board Space

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL.

4. 318−03 AND −07 OBSOLETE, NEW STANDARD 318−08.

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)


Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 50 Vdc
Gate−to−Source Voltage − Continuous VGS ± 20 Vdc
Total Power Dissipation @ TA = 25°C PD 225 mW
Operating and Storage Temperature Range TJ, Tstg − 55 to 150 °C
Thermal Resistance − Junction−to−Ambient RJA 556 °C/W
Maximum Lead Temperature for Soldering Purposes, for 10 seconds TL 260 °C

BSS138LT1G Power Mosfet Transistor Power MOSFET 200 mA , 50 V N−Channel SOT−23

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