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IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

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Brand Name :IRF
Model Number :IRFI4020H-117P
Certification :Original Factory Pack
Place of Origin :Original
MOQ :20pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :5200PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
VDS :200 V
RDS(ON) typ. @ 10V :80 m
Qg typ. :19 nC
Qsw typ :6.8 nC
RG(int) typ. :3.0 Ω
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IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 VFeatures

► Integrated half-bridge package 

► Reduces the part count by half 

► Facilitates better PCB layout 

► Key parameters optimized for Class-D audio amplifier applications 

► Low RDS(ON) for improved efficiency 

► Low Qg and Qsw for better THD and improved efficiency  Low Qrr for better THD and lower EMI 

► Can delivery up to 300W per channel into 8Ω load in half-bridge configuration amplifier 

► Lead-free package

Description

This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It consists of two power MosFET switches connected in half-bridge configuration. The latest process is used to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery, and internal Gate resistance are optimized to improve key Class D audio amplifier performance factors such as efficiency, THD and EMI. These combine to make this Half-Bridge a highly efficient, robust and reliable device for Class D audio amplifier applications.

Parameter Max Units
VDS Drain-to-Source Voltage 200 V
VGS Gate-to-Source Voltage ±20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 9.1

A

ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 5.1 A

IRFI4020H-117P Power Mosfet Transistor DIGITAL AUDIO MOSFET 200 V

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