Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

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Brand Name :Anterwell
Model Number :BTA40-600B
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7600pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Storage junction temperature range :- 40 to + 150°C
Operating junction temperature range :- 40 to + 125°C
Average gate power dissipation :1 W
Peak gate current :8 A
Threshold voltage :0.85 V
Dynamic resistance :10 mΩ
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View Product Description


BTA40, BTA41 and BTB41 Series
40A TRIACS

Main Features

SymbolValueUnit
IT(RMS)40A
VDRM/VRRM600 and 800V
IGT (Q1)50mA


DESCRIPTION
Available in high power packages, the BTA/ BTB40-41 series is suitable for general purpose AC switching. They can be used as an ON/OFF function in applications such as static relays, heating regulation, induction motor starting circuits... or for phase control operation in light dimmers, motor speed controllers, ...
Thanks to their clip assembly technique, they provide a superior performance in surge current handling capabilities.
By using an internal ceramic pad, the BTA series provides voltage insulated tab (rated at 2500VRMS) complying with UL standards (File ref.: E81734).

Absolute Maximum Ratings

SymbolParameterValueUnit
IT(RMS)RMS on-state current (full sine wave)RD91 / TOP3Tc = 95°C40A
TOP Ins.Tc = 80°C
ITSMNon repetitive surge peak on-state current (full cycle, Tj initial = 25°C)F = 50 Hzt = 20 ms400A
F = 60 Hzt = 16.7 ms420
I² tI² t Value for fusing

tp = 10 ms

880A² s
dI/dtCritical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 nsF = 120 HzTj = 125°C50A/µs
VDSM/VRSMNon repetitive surge peak off-state voltagetp = 10 msTj = 25°C

VDSM/VRSM

+ 100

V
IGMPeak gate currenttp = 20 µsTj = 125°C8A
PG(AV)Average gate power dissipationTj = 125°C1W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C


BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

TOP3 (Insulated and non insulated) Package Mechanical Data
BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs

RD91 Package Mechanical Data
BTA40-600B complementary silicon power transistors Mosfet Power Module 40A TRIACs


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