Anterwell Technology Ltd.
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TOSHIBA Power Transistor Module Silicon NPN Epitaxial Type
(Four Darlington Power Transistors in One)
MP4104
High Power Switching Applications
Hammer Drive, Pulse Motor Drive and Inductive Load Switching
• Small package by full molding (SIP 10 pins)
• High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25°C)
• High collector current: IC (DC) = 4 A (max)
• High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1.5 A)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Collector-base voltage | VCBO | 120 | V | |
| Collector-emitter voltage | VCEO | 100 | V | |
| Emitter-base voltage | VEBO | 6 | V | |
| Collector current | DC | IC | 4 | A |
| Pulse | ICP | 6 | A | |
| Continuous base current | IB | 0.5 | A | |
| Collector power dissipation (1-device operation) | PC | 2.0 | W | |
| Collector power dissipation (4-device operation) | PT | 4.0 | W | |
| Junction temperature | Tj | 150 | °C | |
| Storage temperature range | Tstg | −55 to 150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Industrial Applications Unit: mm
Weight: 2.1 g (typ.)
Array Configuration
Marking