Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

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Brand Name :Anterwell
Model Number :T410-600B-TR
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8600pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
I² t Value for fusing :5.1 A² s
Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns :50 A/µs
Peak gate current :4 A
Average gate power dissipation :1 W
Storage junction temperature range :- 40 to + 150 °C
Operating junction temperature range :- 40 to + 125 °C
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View Product Description

T4 Series

4A TRIACS

Main Features

Symbol Value Unit
IT(RMS) 4 A
VDRM/VRRM 600 to 800 V
IGT (Q1) 5 to 35 mA

DESCRIPTION

Based on ST’s Snubberless / Logic level technology providing high commutation performances, the T4 series is suitable for use on AC inductive loads.

They are recommended for applications using universal motors, electrovalves.... such as kitchen aid equipments, power tools, dishwashers,... Available in a fully insulated package, the T4...- ...W version complies with UL standards (ref. E81734).

Absolute Maximum Ratings

Symbol Parameter Value Unit
IT(RMS) RMS on-state current (full sine wave) IPAK/DPAK/ TO-220AB Tc = 110°C 4 A
ISOWATT220AB Tc = 105°C
ITSM Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) F = 50 Hz t = 20 ms 30 A
F = 60 Hz t = 16.7 ms 31
I ² t I² t Value for fusing tp = 10 ms 5.1 A² s
dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 120 Hz Tj = 125°C 50 A/µs
IGM Peak gate current tp = 20 µs Tj = 125°C 4 A
PG(AV) Average gate power dissipation Tj = 125°C 1 W

Tstg

Tj

Storage junction temperature range

Operating junction temperature range

- 40 to + 150

- 40 to + 125

°C

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

DPAK Package Mechanical Data

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

DPAK Foot Print Dimensions (in millimeters)

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

ISOWATT220AB Package Mechanical Data

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

IPAK Package Mechanical Data

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

TO-220AB Package Mechanical Data

T410-600B-TR Triacs Sensitive Gate Electronics Integrated Circuits Power Mosfet Transistor 4A TRIACS

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