Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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| Part No. | Quantity | Brand | D/C | Package |
| L6599D | 6828 | ST | 13+ | SOP-16 |
| L7805ABP | 12978 | ST | 11+ | TO-220F |
| L7812CV | 60000 | STM | 14+ | TO-220 |
| L78L33ACUTR | 38000 | ST | 15+ | SOT-89 |
| L78M05CDT | 98000 | ST | 16+ | TO-252 |
| L78M08ABDT-TR | 14698 | ST | 16+ | SOT-252 |
| L78M12CDT | 101000 | ST | 13+ | TO-252 |
| L78S05CV | 11629 | ST | 16+ | TO-220 |
| L78S12CV | 4245 | ST | 16+ | TO-220 |
| L7985ATR | 13028 | STM | 15+ | HSOP-8 |
| L9407F | 3184 | ST | 15+ | ZIP |
| L9637D013TR | 1520 | ST | 15+ | SOP |
| L9826TR | 3101 | ST | 12+ | SOP-20 |
| LA4440 | 3580 | SANYO | 13+ | ZIP-14 |
| LA78040 | 15692 | SANYO | 14+ | TO-220 |
| LA78041 | 14769 | SANYO | 15+ | TO-220 |
| LA78045 | 16047 | SANYO | 13+ | TO-220-7 |
| LAN83C185-JT | 2746 | SMSC | 16+ | QFP64 |
| LAN8710A-EZK-TR | 5987 | SMSC | 13+ | QFN32 |
| LAN8710AI-EZK-TR | 15547 | SMSC | 14+ | QFN |
| LAN8720A-CP-TR | 4876 | MICROCHIP | 16+ | QFN24 |
| LAN9115-MT | 7959 | MICROCHIP | 09+ | QFP |
| LCDA05.TBT | 7787 | SEMTECH | 11+ | SOP-8 |
| LCMXO640C-3TN100C | 4897 | LATTICE | 12+ | TQFP100 |
| LCMZO640C-4TN100C | 1113 | LATTICE | 16+ | QFP100 |
| LCP02-150B1RL | 6643 | ST | 16+ | SOP-8 |
| LD1086D2M33TR | 4316 | ST | 14+ | TO-263 |
| LD1086V33 | 6714 | ST | 08+ | TO-220 |
| LD1117ADT18TR | 51000 | ST | 15+ | TO-252 |
| LD1117S18TR | 101000 | ST | 11+ | SOT-223 |
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
(π−MOSV) 2SK2996
DC−DC Converter, Relay Drive and Motor Drive Applications
Low drain−source ON resistance : RDS (ON) = 0.74 Ω (typ.)
High forward transfer admittance : |Yfs| = 6.8 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 600 V)
Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
| Drain−source voltage | VDSS | 600 | V | |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | 600 | V | |
| Gate−source voltage | VGSS | ±30 | V | |
| Drain current | DC (Note 1) | ID | 10 | A |
| Pulse (Note 1) | IDP | 30 | ||
| Drain power dissipation (Tc = 25°C) | PD | 45 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 252 | mJ | |
| Avalanche current | IAR | 10 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 4.5 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | −55~150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Weight: 1.9 g (typ.)