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DISTINCTIVE CHARACTERISTICS
■ Single power supply operation
— 5.0 Volt-only operation for read, erase, and program operations
— Minimizes system level requirements
■ Manufactured on 0.32 µm process technology
— Compatible with 0.5 µm Am29F800 device
■ High performance
— Access times as fast as 55 ns
■ Low power consumption (typical values at 5 MHz)
— 1 µA standby mode current
— 20 mA read current (byte mode)
— 28 mA read current (word mode)
— 30 mA program/erase current
GENERAL DESCRIPTION
The Am29F800B is an 8 Mbit, 5.0 volt-only Flash memory organized as 1,048,576 bytes or 524,288 words. The device is offered in 44-pin SO, 48-pin TSOP, and 48-ball FBGA packages. The device is also available in Known Good Die (KGD) form. For more information, refer to publication number 21631. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. This device is designed to be programmed in-system with the standard system 5.0 volt VCC supply. A 12.0 V VPP is not required for write or erase operations. The device can also be programmed in standard EPROM programmers.
This device is manufactured using AMD’s 0.32 µm process technology, and offers all the features and benefits of the Am29F800, which was manufactured using 0.5 µm process technology.
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