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2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR

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Brand Name :Anterwell
Model Number :2SA1412
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7900pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Collector to base voltage :−400 V
Collector to emitter voltage :−400 V
Base to emitter voltage :−7 V
Collector current (DC) :−2.0 A
Junction temperature :150 °C
Storage temperature :−55 to +150 °C
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SILICON POWER TRANSISTOR 2SA1412-Z

PNP SILICON TRIPLE DIFFUSED TRANSISTOR

DESCRIPTION

The 2SA1412-Z is designed for High Voltage Switching, especially in Hybrid Integrated Circuits.

FEATURES

• High Voltage: VCEO = −400 V

• High Speed: tf ≤ 0.7 μs

• Complement to 2SC3631-Z

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Collector to base voltage VCBO −400 V

Collector to emitter voltage VCEO −400 V

Base to emitter voltage VEBO −7 V

Collector current (DC) IC(DC) −2.0 A

Collector current (pulse) Note 1 IC(pulse) −4.0 A

Total power dissipation (TA = 25°C) Note 2 PT 2.0 W

Junction temperature Tj 150 °C

Storage temperature Tstg −55 to +150 °C

Notes 1. PW ≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 7.5 cm2 × 0.7 mm

PACKAGE DRAWING (Unit: mm)

2SA1412 Power Mosfet Transistor SILICON POWER TRANSISTOR

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