Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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IRL3713PBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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IRL3713PBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

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Brand Name :Anterwell
Model Number :IRL3713PBF
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8300pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Drain-Source Voltage :30 V
Gate-to-Source Voltage :± 20 V
Pulsed Drain Current :1040 A
Linear Derating Factor :2.2 W/°C
Junction Temperature :-55 to +175°C
Storage Temperature :-55 to +175°C
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View Product Description

IRL3713PbF IRL3713SPbF IRL3713LPbF

HEXFET Power MOSFET

SMPS MOSFET

Applications

  • High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use 
  • High Frequency Buck Converters for Computer Processor Power 
  • 100% RG Tested 
  • Lead-Free

Benefits 

  • Ultra-Low Gate Impedance 
  • Very Low RDS(on) at 4.5V VGS 
  • Fully Characterized Avalanche Voltage and Current

Absolute Maximum Ratings

Symbol Parameter Max Units
VDS Drain-Source Voltage 30 V
VGS Gate-to-Source Voltage ± 20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 260 A
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 180 A
IDM Pulsed Drain Current 1040 A
PD @TC = 25°C Maximum Power Dissipation 330 W
PD @TC = 100°C Maximum Power Dissipation 170 W
Linear Derating Factor 2.2 W/°C
TJ, TSTG Junction and Storage Temperature Range -55 to +175 °C

IRL3713PBF Power Mosfet Transistor electrical ic HEXFET Power MOSFET

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