Anterwell Technology Ltd.
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PBSS4112PAN
120 V, 1 A NPN/NPN low VCEsat (BISS) transistor
General description
NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.
Features and benefits
• Very low collector-emitter saturation voltage VCEsat
• High collector current capability IC and ICM
• High collector current gain hFE at high IC
• Reduced Printed-Circuit Board (PCB) requirements
• High energy efficiency due to less heat generation
• AEC-Q101 qualified
Applications
• Load switch
• Battery-driven devices
• Power management
• Charging circuits
• Power switches (e.g. motors, fans)
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
| Symbol | Parameter | Conditions | Min | Max | Unit | |
| Per transistor | ||||||
| VCBO | collector-base voltage | open emitter | - | 120 | V | |
| VCEO | collector-emitter voltage | open base | - | 120 | V | |
| VEBO | emitter-base voltage | open collector | - | 7 | V | |
| IC | collector current | - | 1 | A | ||
| ICM | peak collector current | single pulse; tp ≤ 1 ms | - | 1.5 | A | |
| IB | base current | - | 0.3 | A | ||
| IBM | peak base current | single pulse; tp ≤ 1 ms | - | 1 | A | |
| Ptot | total power dissipation | Tamb ≤ 25 °C |
[1] [2] [3] [4] [5] [6] [7] [8] |
- - - - - - - - |
370 570 530 700 450 760 700 1450 |
mW mW mW mW mW mW mW mW |
| Per device | ||||||
| Ptot | total power dissipation | Tamb ≤ 25 °C |
[1] [2] [3] [4] [5] [6] [7] [8] |
- - - - - - - - |
510 780 730 960 620 1040 960 2000 |
mW mW mW mW mW mW mW mW |
| Tj | junction temperature | - | 150 | °C | ||
| Tamb | ambient temperature | -55 | 150 | °C | ||
| Tstg | storage temperature | -65 | 150 | °C | ||
[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .
[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.
[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .
[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.
[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .
[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.
[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .
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