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PBSS4112PAN Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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PBSS4112PAN Power Mosfet Transistor NPN/NPN low VCEsat (BISS) transistor

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Brand Name :Anterwell
Model Number :PBSS4112PAN
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :7900pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
collector-base voltage :120 V
collector-emitter voltage :120 V
emitter-base voltage :7 V
collector current :1 A
peak collector current :1.5 A
base current :0.3 A
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PBSS4112PAN

120 V, 1 A NPN/NPN low VCEsat (BISS) transistor

General description

NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement: PBSS4112PANP. PNP/PNP complement: PBSS5112PAP.

Features and benefits

• Very low collector-emitter saturation voltage VCEsat

• High collector current capability IC and ICM

• High collector current gain hFE at high IC

• Reduced Printed-Circuit Board (PCB) requirements

• High energy efficiency due to less heat generation

• AEC-Q101 qualified

Applications

• Load switch

• Battery-driven devices

• Power management

• Charging circuits

• Power switches (e.g. motors, fans)

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit
Per transistor
VCBO collector-base voltage open emitter - 120 V
VCEO collector-emitter voltage open base - 120 V
VEBO emitter-base voltage open collector - 7 V
IC collector current - 1 A
ICM peak collector current single pulse; tp ≤ 1 ms - 1.5 A
IB base current - 0.3 A
IBM peak base current single pulse; tp ≤ 1 ms - 1 A
Ptot total power dissipation Tamb ≤ 25 °C

[1]

[2]

[3]

[4]

[5]

[6]

[7]

[8]

-

-

-

-

-

-

-

-

370

570

530

700

450

760

700

1450

mW

mW

mW

mW

mW

mW

mW

mW

Per device
Ptot total power dissipation Tamb ≤ 25 °C

[1]

[2]

[3]

[4]

[5]

[6]

[7]

[8]

-

-

-

-

-

-

-

-

510

780

730

960

620

1040

960

2000

mW

mW

mW

mW

mW

mW

mW

mW

Tj junction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C

[1] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[3] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated and standard footprint.

[4] Device mounted on 4-layer PCB 35 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[5] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated and standard footprint.

[6] Device mounted on an FR4 PCB, single-sided 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

[7] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated and standard footprint.

[8] Device mounted on 4-layer PCB 70 µm copper strip line, tin-plated, mounting pad for collector 1 cm2 .

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