Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

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Brand Name :Anterwell
Model Number :TLP251F
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8200pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Input threshold current :5 mA
Supply current :11 mA
Supply voltage :10~35 V
Output peak current :±0.4 A
Switching time :1 μs
Isolation voltage :2500 Vrms
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TOSHIBA Photocoupler GaAℓAs Ired & Photo−IC

TLP251F

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Induction Heating

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Power MOSFET Gate Drive

IGBT Gate Drive

The TOSHIBA TLP251F consists of a GaAℓAs light emitting diode and an integrated photodetector.

This unit is 8−lead DIP package.

TLP251F is suitable for gate driving circuit of IGBT or power MOS FET. Especially TLP251 is capable of “direct” gate drive of lower power IGBTs. (~15A)

• Input threshold current: IF = 5mA (max.)

• Supply current: 11mA (max.)

• Supply voltage: 10~35V

• Output peak current: ±0.4A (max.)

• Switching time: tpHL, tpLH = 1μs (max.)

• Isolation voltage: 2500Vrms(min.)

• UL recognized: UL1577, file no. E67349

• Option (D4) type VDE approved:

DIN EN 60747-5-2, certificate no. 40011913

Maximum operating insulation voltage: 1140VPK

Highest permissible over voltage: 6000VPK


(Note 1) When a EN 60747-5-2 approved type is needed, please designate the “ Option (D4) ”

• Structural parameter

Creepage distance: 8.0mm (min.)

Clearance: 8.0mm (min.)

TLP251F Integrated Circuit Chip Power IC Chip GaAГAs Ired & Photo−IC

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