Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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► 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 80 mΩ (typ.)
► High forward transfer admittance : |Yfs| = 8.0 S (typ.)
► Low leakage current : IDSS = −100 μA (max) (VDS = −60 V) ►Enhancement mode : Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit |
| Drain−source voltage | VDSS | −60 | V |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | −60 | V |
| Gate−source voltage | VGSS | ±20 | V |
| Drain power dissipation (Tc = 25°C) | PD | 40 | W |
| Channel temperature | Tch | 150 | °C |
| Storage temperature range | Tstg | −55 to 150 | °C |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc)
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