Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

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Brand Name :Anterwell
Model Number :IRF7601PBF
Certification :new & original
Place of Origin :original factory
MOQ :10pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :9000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Pulsed Drain Current  :30 A
Power Dissipation :1.8 W
Linear Derating Factor :14 mW/°C
Gate-to-Source Voltage :±12 V
Peak Diode Recovery dv/dt ‚ :5.0 V/ns
Junction and Storage Temperature :-55 to + 150 °C
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IRF7601 HEXFET® Power MOSFET

• Generation V Technology

• Ultra Low On-Resistance

• N-Channel MOSFET

• Very Small SOIC Package

• Low Profile (<1.1mm)

• Available in Tape & Reel

• Fast Switching

Description

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The new Micro8 package, with half the footprint area of the standard SO-8, provides the smallest footprint available in an SOIC outline. This makes the Micro8 an ideal device for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.

IRF7601PBF general purpose mosfet Power Mosfet Transistor N Channel

Absolute Maximum Ratings

Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 4.5V 5.7 A
ID @ TA = 70°C Continuous Drain Current, VGS @ 4.5V 4.6 A
IDM Pulsed Drain Current  30 A
PD @TA = 25°C Power Dissipation 1.8 W
Linear Derating Factor 14 mW/°C
VGS Gate-to-Source Voltage ± 12 V
dv/dt Peak Diode Recovery dv/dt ‚ 5.0 V/ns
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C

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