Anterwell Technology Ltd.

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W29EE512P-70 Integrated Circuit Chip 64K X 8 CMOS FLASH MEMORY

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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W29EE512P-70 Integrated Circuit Chip 64K X 8 CMOS FLASH MEMORY

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Brand Name :Anterwell
Model Number :W29EE512P-70
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :8200pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Power Supply Current :50 mA
Input Leakage Current :10 μA
Output Leakage Current :10 μA
Input Low Voltage :0.8 V
Input High Voltage :2.0 V
Output Low Voltage :0.45 V
Output High Voltage :2.4 V
Output High Voltage CMOS :4.2 V
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W29EE512

64K × 8 CMOS FLASH MEMORY

GENERAL DESCRIPTION

The W29EE512 is a 512K bit, 5-volt only CMOS flash memory organized as 64K ´ 8 bits. The device can be programmed and erased in-system with a standard 5V power supply. A 12-volt VPP is not required. The unique cell architecture of the W29EE512 results in fast program/erase operations with extremely low current consumption (compared to other comparable 5-volt flash memory products). The device can also be programmed and erased using standard EPROM programmers.

FEATURES

· Single 5-volt program and erase operations

· Fast page-write operations

- 128 bytes per page

- Page program cycle: 10 mS (max.)

- Effective byte-program cycle time: 39 mS

- Optional software-protected data write

· Fast chip-erase operation: 50 mS

· Read access time: 70/90/120 nS

· Typical page program/erase cycles: 1K/10K

· Ten-year data retention

· Software and hardware data protection

· Low power consumption

- Active current: 50 mA (max.)

- Standby current: 100 mA (max.)

· Automatic program timing with internal VPP generation

· End of program detection

- Toggle bit

- Data polling

· Latched address and data

· TTL compatible I/O

· JEDEC standard byte-wide pinouts

· Available packages: 32-pin PLCC, TSOP and VSOP

W29EE512P-70 Integrated Circuit Chip 64K X 8 CMOS FLASH MEMORY

Absolute Maximum Ratings

PARAMETER RATING UNIT
Power Supply Voltage to Vss Potential -0.5 to +7.0 V
Operating Temperature 0 to +70 °C
Storage Temperature -65 to +150 °C
D.C. Voltage on Any Pin to Ground Potential except A9 -0.5 to VCC +1.0 V
Transient Voltage (¡ Õ20 nS) on Any Pin to Ground Potential -1.0 to VCC +1.0 V
Voltage on A9 and #OE Pin to Ground Potential -0.5 to 12.5 V

Note: Exposure to conditions beyond those listed under Absolute Maximum Ratings may adversely affect the life and reliability of the device.

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