Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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Brand Name :TOSHIBA
Model Number :TPC8111
Certification :Original Factory Pack
Place of Origin :Taiwan
MOQ :5pcs
Price :Negotiation
Payment Terms :T/T, Western Union,PayPal
Supply Ability :580PCS
Delivery Time :1 Day
Packaging Details :please contact me for details
VDSS :−30 V
VDGR :−30 V
VGSS :±20 V
ID :−11 A
PD :1.9 W
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TPC8111 Field Effect Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFETLithium Ion Battery Applications

Notebook PC Applications

Portable Equipment Applications

• Small footprint due to small and thin package

• Low drain-source ON resistance: RDS (ON) = 8.1 mΩ (typ.)

• High forward transfer admittance: |Yfs| = 23 S (typ.)

• Low leakage current: IDSS = −10 µA (max) (VDS = −30 V)

• Enhancement-mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit
Drain-source voltage VDSS −30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR −30 V
Gate-source voltage VGSS ±20 V
Drain power dissipation (t = 10 s) PD 1.9 W
Drain power dissipation (t = 10 s) PD 1.0 W
Single pulse avalanche energy EAS 31.5 mJ
Avalanche current IAR −11 A
Repetitive avalanche energy EAR 0.19 mJ
Channel temperature Tch 150 °C

TPC8111 Field Effect Power Mosfet Transistor Silicon P Channel MOS Type HEXFET Power MOSFET

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