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2N6405G
Silicon Controlled Rectifiers Reverse Blocking Thyristors 50 thru 800 VOLTS
Features
• Glass Passivated Junctions with Center Gate
Geometry for Greater Parameter Uniformity and Stability
• Small, Rugged, Thermowatt Construction
for Low Thermal Resistance, High Heat Dissipation an
• Blocking Voltage to 800 V
• These are Pb−Free Devices
MAXIMUM RATINGS* (TJ = 25°C unless otherwise noted)
Rating | Symbol | Value | Unit |
On-State Current RMS | IT(RMS) | 16 | A |
Average On-State Current | IT(AV) | 10 | A |
Peak Non-repetitive Surge Current | ITSM | 160 | A |
Circuit Fusing Considerations (t = 8.3 ms) | I 2t | 145 | A2s |
Forward Peak Gate Power | PGM | 20 | W |
Forward Average Gate Power | PG(AV) | 0.5 | W |
Forward Peak Gate Current | IGM | 2.0 | A |
Operating Junction Temperature Range | TJ | −40 to +125 | °C |
Storage Temperature Range | Tstg | −40 to +150 | °C |