Anterwell Technology Ltd.

Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.

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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

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Anterwell Technology Ltd.
City:shenzhen
Province/State:guangdong
Country/Region:china
Contact Person:MissSharon Yang
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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

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Brand Name :Anterwell
Model Number :2SC3356-T1B
Certification :new & original
Place of Origin :original factory
MOQ :20pcs
Price :Negotiate
Payment Terms :T/T, Western Union, Paypal
Supply Ability :9000pcs
Delivery Time :1 day
Packaging Details :Please contact me for details
Collector to Base Voltage :20 V
Collector to Emitter Voltage :12 V
Emitter to Base Voltage :3.0 V
Collector Current :100 mA
Total Power Dissipation :200 mW
Junction Temperature :150 °C
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2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

FEATURES

• Low noise and high gain : NF = 1.1 dB TYP., Ga = 11 dB TYP. @ VCE = 10 V, IC = 7 mA, f = 1 GHz

• High power gain : MAG = 13 dB TYP. @ VCE = 10 V, IC = 20 mA, f = 1 GHz

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3.0 V
Collector Current IC 100 mA
Total Power Dissipation Ptot Note 200 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C

Note Free air

PACKAGE DIMENSIONS

3-PIN MINIMOLD (UNIT: mm)

2SC3356- T1B NPN Silicon RF Power Mosfet Transistor 100 mA Collector Current

PIN CONNECTIONS

1. Emitter

2. Base

3. Collector

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