Anterwell Technology Ltd.
Anterwell Technology Ltd. Large Original stock of IC Electronics Components, Transistors, Diodes etc. High Quality, Reasonable Price, Fast Delivery.
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSV)
2SK2382
Switching Regulator, DC−DC Converter and Motor Drive Applications
Low drain−source ON resistance : RDS (ON) = 0.13 Ω (typ.)
High forward transfer admittance : |Yfs| = 17 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 200 V)
Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
| Characteristics | Symbol | Rating | Unit | |
|---|---|---|---|---|
| Drain−source voltage | VDSS | 200 | V | |
| Drain−gate voltage (RGS = 20 kΩ) | VDGR | 200 | V | |
| Gate−source voltage | VGSS | ±20 | V | |
| Drain current | DC (Note 1) | ID | 15 | A |
| Pulse (Note 1) | IDP | 45 | A | |
| Drain power dissipation (Tc = 25°C) | PD | 45 | W | |
| Single pulse avalanche energy (Note 2) | EAS | 166 | mJ | |
| Avalanche current | IAR | 15 | A | |
| Repetitive avalanche energy (Note 3) | EAR | 4.5 | mJ | |
| Channel temperature | Tch | 150 | °C | |
| Storage temperature range | Tstg | −55 to 150 | °C | |
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
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